- Parent Category: Product News
- Category: MICROCHIP Articles
- Published on Friday, 11 May 2012 04:45
- Written by Super User
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Vishay Intertechnology, Inc. announced the launch of a new generation of the TrenchFET ® Gen IV Series 30V n-channel power MOSFET devices - SiRA00DP, SiRA02DP SiRA04DP and SiSA04DN. The four devices are a new type of high-density design, low-resistance at 4.5V 1.35mΩ Miller, charge Qgd as low as 1.8nC using PowerPAK ® SO-8 and 1212-8 package.
The new Vishay Siliconix the TrenchFET IV in silicon design, wafer processing and device packaging, a number of technical improvements, provides many benefits for the power electronics system designers. SiRA00DP-resistance area product is reduced by 60% compared with the previous-generation devices, the 1.0mΩ the very low the RDS (on) 10V voltage, 4.5V under the conduction resistance 1.35mΩ the best in the industry level. For designers, the low on-resistance of the MOSFET can achieve lower conduction loss, reducing the power loss to achieve higher efficiency.
The TrenchFET of Gen IV MOSFET with a new structure, this structure is the design of very high density, while no significant increase in gate charge, to overcome this problem appears often in the number of devices on the high lattice. Released today by the MOSFET total gate charge is low, making SiRA04DP conduction resistance and gate charge product of excellent value coefficient (FOM) to dropped 56nC-Ω, at 4.5V.
The SiRA00DP, SiRA02DP and SiRA04DP improve system efficiency, lower the temperature, the use of 6.15mm x 5.15mm PowerPAK ® SO-8 package with similar, SiSA04DN efficiency, the area of 3.30mm x 3.30mm PowerPAK 1212-8 package is only the first three devices 1/3. All devices released today Qgd / Qgs ratio of 0.5 or lower. The lower the ratio can be reduced gate induced voltage, and help prevent the occurrence of breakdown.
The SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN applicable to high power density DC / DC converters, synchronous rectification, synchronous buck converters and OR-ing applications. Typical end products include switching power supply, voltage regulator module (VRM), POL, communications brick power supply, PC and server.
The TrenchFET of Gen IV after 100% Rg-and UIS test. These devices comply with IEC 61249-2-21 halogen-free requirements and RoHS directives.
The TrenchFET Gen IV series, a complete detailed data for all products, please visit: http://www.vishay.com/mosfets/trenchfet-gen-iv/.
Vishay Siliconix is the industry's first to introduce Trench MOSFET suppliers. The company's TrenchFET intellectual property includes a large number of patents, and can be traced back to the early 1980s, the basic technology patents. Each new generation of TrenchFET technology products produced a wide variety of computing, communications, consumer electronics and other applications in the power MOSFET's performance considerable value.
Through continuous efforts,Our company became certified ERAI member in 2009.
Our company passes ISO9001: 2008 quality management system certification in 2011.